NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics

Henson, KirklenKirklenHensonCollaert, NadineNadineCollaertDemand, MarcMarcDemandGoodwin, MichaelMichaelGoodwinBrus, StephanStephanBrusRooyackers, RitaRitaRooyackersVan Ammel, AnnemieAnnemieVan AmmelDegroote, BartBartDegrooteErcken, MoniqueMoniqueErckenBaerts, ChristinaChristinaBaertsKottantharayil, AnilAnilKottantharayilDixit, AbhisekAbhisekDixitBeckx, StephanStephanBeckxSchram, TomTomSchramDeweerd, WimWimDeweerdBoullart, WernerWernerBoullartSchaekers, MarcMarcSchaekersDe Gendt, StefanStefanDe GendtDe Meyer, KristinKristinDe MeyerYim, Yong SikYong SikYimHooker, JacobJacobHookerJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemans2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10579NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectricsProceedings paper