Demonstration of fully Ni-silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applications

Kottantharayil, AnilAnilKottantharayilVeloso, AnabelaAnabelaVelosoKubicek, StefanStefanKubicekSchram, TomTomSchramAugendre, EmmanuelEmmanuelAugendrede Marneffe, Jean-FrancoisJean-Francoisde MarneffeDevriendt, KatiaKatiaDevriendtLauwers, AnneAnneLauwersBrus, StephanStephanBrusHenson, KirklenKirklenHensonBiesemans, SergeSergeBiesemans2021-10-152021-10-152004-06https://imec-publications.be/handle/20.500.12860/9144Demonstration of fully Ni-silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applicationsProceedings paper