Experimental comparison between relaxed and strained Ge pFinFETs

Oliveira, AlbertoAlbertoOliveiraAgopian, P.G.D.P.G.D.AgopianMartino, Joao A.Joao A.MartinoSimoen, EddyEddySimoenMitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersCollaert, NadineNadineCollaertClaeys, CorCorClaeys2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29107Experimental comparison between relaxed and strained Ge pFinFETsProceedings paperhttp://ieeexplore.ieee.org/document/7962576/