InGaAs Nano-ridge Laser Emitting in the Telecom O-band Monolithically Grown on a 300 mm Si Wafer

Colucci, DavideDavideColucciShi, YutingYutingShiBaryshnikova, MarinaMarinaBaryshnikovaMols, YvesYvesMolsMuneeb, MuhammadMuhammadMuneebDe Koninck, YannickYannickDe KoninckPantouvaki, MariannaMariannaPantouvakiVan Campenhout, JorisJorisVan CampenhoutKunert, BernardetteBernardetteKunertVan Thourhout, DriesDriesVan Thourhout2022-03-162022-03-162021naWOS:000728078300241https://imec-publications.be/handle/20.500.12860/39474InGaAs Nano-ridge Laser Emitting in the Telecom O-band Monolithically Grown on a 300 mm Si WaferProceedings paper10.1109/CLEO/Europe-EQEC52157.2021.9541820978-1-6654-1876-8WOS:000728078300241