Multi-VT Options at Scaled Vertical Pitch in Gate-All-Around Nanosheet Devices by Independent Inner-Outer Work-function Tuning

Gaddemane, GautamGautamGaddemaneBhuwalka, KrishnaKrishnaBhuwalkaRzepa, GerhardGerhardRzepaSchuddinck, PieterPieterSchuddinckArimura, HiroakiHiroakiArimuraMatagne, PhilippePhilippeMatagneWu, HaoHaoWuHoriguchi, NaotoNaotoHoriguchiHellings, GeertGeertHellingsLiu, ChangzeChangzeLiu2025-06-172024-09-142025-06-172024979-8-3503-8308-9N/AWOS:001223367200189https://imec-publications.be/handle/20.500.12860/44485Multi-VT Options at Scaled Vertical Pitch in Gate-All-Around Nanosheet Devices by Independent Inner-Outer Work-function TuningProceedings paper10.1109/EDTM58488.2024.10512044979-8-3503-7152-9WOS:001223367200189