Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain

Wang, L.L.WangZhang, E.X.E.X.ZhangZhang, C.X.C.X.ZhangDuan, G.X.G.X.DuanSchrimpf, R.D.R.D.SchrimpfFleetwood, D.M.D.M.FleetwoodReed, R.A.R.A.ReedSamsel, I.K.I.K.SamselHachtel, J.J.HachtelAlles, M.L.M.L.AllesWitters, LiesbethLiesbethWittersCollaert, NadineNadineCollaertLinten, DimitriDimitriLintenMitard, JeromeJeromeMitardPantelides, S.T.S.T.PantelidesGalloway, K.F.K.F.Galloway2021-10-232021-10-232015https://imec-publications.be/handle/20.500.12860/26158Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drainProceedings paper