Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 layer

Derluyn, JoffJoffDerluynBoeykens, StevenStevenBoeykensCheng, KaiKaiChengVandersmissen, RafRafVandersmissenDas, JohanJohanDasRuythooren, WouterWouterRuythoorenDegroote, StefanStefanDegrooteLeys, MaartenMaartenLeysGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-162021-10-162005-09https://imec-publications.be/handle/20.500.12860/10376Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 layerJournal article