NBTI in replacement metal gate SiGe core finFETs: impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneal

Franco, JacopoJacopoFrancoKaczer, BenBenKaczerVaisman Chasin, AdrianAdrianVaisman ChasinMertens, HansHansMertensRagnarsson, Lars-AkeLars-AkeRagnarssonRitzenthaler, RomainRomainRitzenthalerMukhopadhyay, SubhadeepSubhadeepMukhopadhyayArimura, HiroakiHiroakiArimuraRoussel, PhilippePhilippeRousselBury, ErikErikBuryHoriguchi, NaotoNaotoHoriguchiLinten, DimitriDimitriLintenGroeseneken, GuidoGuidoGroesenekenThean, AaronAaronThean2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26632NBTI in replacement metal gate SiGe core finFETs: impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure annealProceedings paper