Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis

Abrenica, GranielGranielAbrenicaLebedev, MikhailMikhailLebedevFingerle, MathiasMathiasFingerleArnauts, SophiaSophiaArnautsBazzazian, NinaNinaBazzazianCalvet, WolframWolframCalvetPorret, ClémentClémentPorretBender, HugoHugoBenderMayer, ThomasThomasMayerDe Gendt, StefanStefanDe Gendtvan Dorp, DennisDennisvan Dorp2021-10-282021-10-2820202050-7526https://imec-publications.be/handle/20.500.12860/34587Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysisJournal articlehttps://doi.org/10.1039/D0TC02763D