Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs

Oliveira, AlbertoAlbertoOliveiraAgopian, PaulaPaulaAgopianMartino, JoaoJoaoMartinoSimoen, EddyEddySimoenMitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersCollaert, NadineNadineCollaertClaeys, CorCorClaeys2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29109Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETsProceedings paperhttp://ieeexplore.ieee.org/document/8309245/