Gama Monteiro Junior, MaxwelMaxwelGama Monteiro JuniorKumar, A.A.KumarKateel, VaishnaviVaishnaviKateelVermeulen, B.B.VermeulenCoester, B.B.CoesterChatterjee, JyotirmoyJyotirmoyChatterjeeTalmelli, GiacomoGiacomoTalmelliPalomino, A.A.PalominoUrrestarazu-Larranaga, J.J.Urrestarazu-LarranagaVan Beek, SimonSimonVan BeekWostyn, KurtKurtWostynRao, SiddharthSiddharthRaoNguyen, Van DaiVan DaiNguyenKar, Gouri SankarGouri SankarKar2026-07-162026-07-162025979-8-3315-6786-62380-9248https://imec-publications.be/handle/20.500.12860/59872In a fully integrated 300 mm platform for perpendicular Spin-Orbit Torque Magnetoresistive RAM (SOT-MRAM), we demonstrate field-free functionality in a 4kb characterization array. Our results show that a stack design of a ferromagnet (FM) / Ta bilayer track enables Z-Spin based switching on SOT-MRAM devices in the <10ns regime. Furthermore, our devices show tunneling magnetoresistance (TMR) > 90% and retention >10 years, which is comparable to a standard field assisted SOT device. The devices integrated in 4kb sub-bank array configurations show excellent distributions and low variability between dies, paving the way for advanced memory applications of SOT-MRAM.engProceedings paper10.1109/iedm50572.2025.11353687WOS:001701480300148ORBIT TORQUE