MBE studies for In0.53Ga0.47As growth using strained buffer layers and in-situ high-k gate passivation

El Kazzi, SalimSalimEl KazziHsu, MarkMarkHsuEzzedini, MaherMaherEzzediniMerckling, ClementClementMerckling2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/23789MBE studies for In0.53Ga0.47As growth using strained buffer layers and in-situ high-k gate passivationMeeting abstract