Improved analytical model for ZTC bias point for strained tri-gates FinFETs

Almeida, L.M.L.M.AlmeidaMartino, J.A.J.A.MartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/16646Improved analytical model for ZTC bias point for strained tri-gates FinFETsProceedings paper