Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors

Tyaginov, StanislavStanislavTyaginovMakarov, AlexanderAlexanderMakarovEl-Sayed, Al-Moatasem BellahAl-Moatasem BellahEl-SayedVaisman Chasin, AdrianAdrianVaisman ChasinBury, ErikErikBuryJech, MarkusMarkusJechVandemaele, MichielMichielVandemaeleGrill, AlexanderAlexanderGrillDe Keersgieter, AnAnDe KeersgieterVexler, MikhailMikhailVexlerEneman, GeertGeertEnemanKaczer, BenBenKaczer2023-06-142023-02-272023-06-1420221541-7026WOS:000922926400091https://imec-publications.be/handle/20.500.12860/41189Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel TransistorsProceedings paper10.1109/IRPS48227.2022.9764515978-1-6654-7950-9WOS:000922926400091INTERFACE DEFECTSNANOWIRE FETHYDROGENENERGYTRANSCONDUCTANCEPASSIVATIONRELIABILITYPERFORMANCEKINETICSFINFET