Veloso, AnabelaAnabelaVelosoChew, Soon AikSoon AikChewSchram, TomTomSchramDekkers, HaroldHaroldDekkersVan Ammel, AnnemieAnnemieVan AmmelWitters, ThomasThomasWittersTielens, HildeHildeTielensHeylen, NancyNancyHeylenDevriendt, KatiaKatiaDevriendtSebaai, FaridFaridSebaaiBrus, StephanStephanBrusRagnarsson, Lars-AkeLars-AkeRagnarssonPantisano, LuigiLuigiPantisanoEneman, GeertGeertEnemanCarbonell, LaureLaureCarbonellRichard, OlivierOlivierRichardFavia, PaolaPaolaFaviaGeypen, JefJefGeypenBender, HugoHugoBenderHiguchi, YuichiYuichiHiguchiPhatak, AnupAnupPhatakThean, AaronAaronTheanHoriguchi, NaotoNaotoHoriguchi2021-10-212021-10-2120130021-4922https://imec-publications.be/handle/20.500.12860/23316W versus Co–Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodesJournal article