Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures

Tang, HongweiHongweiTangBelmonte, AttilioAttilioBelmonteLin, DennisDennisLinAfanasiev, ValeriValeriAfanasievVerdonck, PatrickPatrickVerdonckVaisman Chasin, AdrianAdrianVaisman ChasinDekkers, HaroldHaroldDekkersDelhougne, RomainRomainDelhougneVan Houdt, JanJanVan HoudtKar, Gouri SankarGouri SankarKar2024-08-082024-03-272024-08-0820240038-1101WOS:001178473300001https://imec-publications.be/handle/20.500.12860/43738Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structuresJournal article10.1016/j.sse.2024.108866WOS:001178473300001OF-STATESEXTRACTION