Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials

Margetis, JoeJoeMargetisKohen, DavidDavidKohenPorret, ClémentClémentPorretPetersen Barbosa Lima, LucasLucasPetersen Barbosa LimaKhazaka, RamiRamiKhazakaRengo, GianlucaGianlucaRengoLoo, RogerRogerLooTolle, JohnJohnTolleDemos, AlexAlexDemos2021-10-272021-10-272019-10https://imec-publications.be/handle/20.500.12860/33535Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materialsProceedings paperhttp://ecst.ecsdl.org/content/93/1/7.abstract