Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology

Nguyen, DuyDuyNguyenRosseel, ErikErikRosseelTakeuchi, ShotaroShotaroTakeuchiEveraert, Jean-LucJean-LucEveraertLoo, RogerRogerLooGoossens, JozefienJozefienGoossensMoussa, AlainAlainMoussaClarysse, TrudoTrudoClarysseCaymax, MattyMattyCaymaxVandervorst, WilfriedWilfriedVandervorst2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15922Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technologyMeeting abstract