Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space

Franco, JacopoJacopoFrancoKaczer, BenBenKaczerVaisman Chasin, AdrianAdrianVaisman ChasinBury, ErikErikBuryLinten, DimitriDimitriLinten2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/30723Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias spaceProceedings paperhttps://ieeexplore.ieee.org/document/8353601/