On the gate- and drain-voltage dependence of the RTS amplitude in submicron MOSTs

Simoen, EddyEddySimoenDierickx, BartBartDierickxDe Canne, B.B.De CanneThoma, F.F.ThomaClaeys, CorCorClaeys2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/354On the gate- and drain-voltage dependence of the RTS amplitude in submicron MOSTsJournal article