Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications

Ortolland, ClaudeClaudeOrtollandMathew, SurajSurajMathewDuffy, RayRayDuffySaino, KantaKantaSainoKim, Chul SungChul SungKimMertens, SofieSofieMertensHoriguchi, NaotoNaotoHoriguchiVrancken, ChristaChristaVranckenChiarella, ThomasThomasChiarellaKerner, ChristophChristophKernerAbsil, PhilippePhilippeAbsilLauwers, AnneAnneLauwersBiesemans, SergeSergeBiesemansHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15949Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applicationsProceedings paper