Interplay between statistical variability and reliability in contemporary p-MOSFETs: measurements vs. simulated

Hussin, RazaidiRazaidiHussinAmoroso, SalvatoreSalvatoreAmorosoGerrer, LouisLouisGerrerKaczer, BenBenKaczerWeckx, PieterPieterWeckxFranco, JacopoJacopoFrancoVanderheyden, AnneliesAnneliesVanderheydenVanhaeren, DanielleDanielleVanhaerenHoriguchi, NaotoNaotoHoriguchiAsenov, AsenAsenAsenov2021-10-222021-10-2220140018-9383https://imec-publications.be/handle/20.500.12860/23975Interplay between statistical variability and reliability in contemporary p-MOSFETs: measurements vs. simulatedJournal articlehttp://dx.doi.org/10.1109/TED.2014.2336698