Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors

Agarwal Kumar, TarunTarunAgarwal KumarSoree, BartBartSoreeRadu, IulianaIulianaRaduRaghavan, PraveenPraveenRaghavanFiori, GianlucaGianlucaFioriIannaccone, GiuseppeGiuseppeIannacconeThean, AaronAaronTheanHeyns, MarcMarcHeynsDehaene, WimWimDehaene2021-10-232021-10-2320160003-6951https://imec-publications.be/handle/20.500.12860/26270Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistorsJournal articlehttp://scitation.aip.org/content/aip/journal/apl/108/2/10.1063/1.4939933