Fabrication of high qualtiy Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

Wang, GangGangWangLoo, RogerRogerLooTakeuchi, ShotaroShotaroTakeuchiSouriau, LaurentLaurentSouriauLin, VicVicLinMoussa, AlainAlainMoussaBender, HugoHugoBenderDe Jaeger, BriceBriceDe JaegerOng, PatrickPatrickOngLee, WillieWillieLeeMeuris, MarcMarcMeurisCaymax, MattyMattyCaymaxVandervorst, WilfriedWilfriedVandervorstBlanpain, BartBartBlanpainHeyns, MarcMarcHeyns2021-10-192021-10-1920100040-6090https://imec-publications.be/handle/20.500.12860/18330Fabrication of high qualtiy Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenchesJournal article