Loo, RogerRogerLooAkula, AnjaniAnjaniAkulaShimura, YosukeYosukeShimuraPorret, ClémentClémentPorretRosseel, ErikErikRosseelDursap, ThomasThomasDursapHikavyy, AndriyAndriyHikavyyBeggiato, MatteoMatteoBeggiatoBogdanowicz, JanuszJanuszBogdanowiczMerkulov, AlexAlexMerkulovAyyad, MustafaMustafaAyyadHan, HanHanHanRichard, OlivierOlivierRichardImpagnatiello, AndreaAndreaImpagnatielloWang, D.D.WangYamamoto, K.K.YamamotoSipocz, T.T.SipoczKerekes, A.A.KerekesMertens, HansHansMertensHoriguchi, NaotoNaotoHoriguchiLanger, RobertRobertLanger2025-03-062025-01-262025-03-0620252162-8769WOS:001400636100001https://imec-publications.be/handle/20.500.12860/45116After a short description of the evolution of metal-oxide-semiconductor device architectures and the corresponding requirements on epitaxial growth processes, the manuscript describes the material properties of complicated Si/SiGe multi-layer stacks used for complementary field effect transistor (CFET) devices. They contain two different Ge concentrations and have been grown using conventional process gases. A relatively high growth temperature is used to obtain acceptable Si and SiGe growth rates. Still island growth has been suppressed for Ge concentrations up to 40%. Excellent structural and optical material properties of the Si/SiGe multi-layer stack will be reported, with up to 3 + 3 Si channels in the top and bottom part of the stack, respectively. The absence/presence of lattice defects has also been verified by room-temperature photoluminescence measurements. Photoluminescence measurements at low temperatures are used to study band-to-band luminescence from individual sub-layers and to illustrate the optical material quality of the CFET stack.Journal article10.1149/2162-8777/ada79fWOS:001400636100001SIGE