Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

Srinivasan, AshwynAshwynSrinivasanPorret, ClémentClémentPorretPantouvaki, MariannaMariannaPantouvakiShimura, YosukeYosukeShimuraGieregat, PieterPieterGieregatLoo, RogerRogerLooVan Campenhout, JorisJorisVan CampenhoutVan Thourhout, DriesDriesVan Thourhout2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29489Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser applicationProceedings paperhttp://ieeexplore.ieee.org/document/8116120/