Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN

Ronchi, NicoloNicoloRonchiDe Jaeger, BriceBriceDe JaegerVan Hove, MarleenMarleenVan HoveRoelofs, RobinRobinRoelofsWu, Tian-LiTian-LiWuHu, JieJieHuKang, XuanwuXuanwuKangDecoutere, StefaanStefaanDecoutere2021-10-222021-10-2220150021-4922https://imec-publications.be/handle/20.500.12860/25838Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaNJournal articlehttp://iopscience.iop.org/1347-4065/54/4S/04DF02