Electrical characterization of leaky charge-trapping high-k MOS devices using pulsed Q-V

Martens, KoenKoenMartensRosmeulen, MaartenMaartenRosmeulenKaczer, BenBenKaczerGroeseneken, GuidoGuidoGroesenekenMaes, HermanHermanMaes2021-10-162021-10-162007-05https://imec-publications.be/handle/20.500.12860/12559Electrical characterization of leaky charge-trapping high-k MOS devices using pulsed Q-VJournal article