An adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT technology on 300 mm Si for RF applications

Kumar, AnnieAnnieKumarYadav, SachinSachinYadavVais, AbhitoshAbhitoshVaisBoccardi, GuillaumeGuillaumeBoccardiMols, YvesYvesMolsAlcotte, ReynaldReynaldAlcotteParvais, BertrandBertrandParvaisKunert, BernardetteBernardetteKunertCollaert, NadineNadineCollaert2025-06-052024-09-172025-06-052024979-8-3503-7505-30149-645XWOS:001286345600232https://imec-publications.be/handle/20.500.12860/44497An adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT technology on 300 mm Si for RF applicationsProceedings paper10.1109/IMS40175.2024.10600299979-8-3503-7504-6WOS:001286345600232