Quantum well band calculations and their impact on device isolation and work function requirements for SiGe and III/V strained heterostructure FinFETs

Eneman, GeertGeertEnemanBrunco, DavidDavidBruncoRoussel, PhilippePhilippeRousselHellings, GeertGeertHellingsKubicek, StefanStefanKubicekHoriguchi, NaotoNaotoHoriguchiCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22310Quantum well band calculations and their impact on device isolation and work function requirements for SiGe and III/V strained heterostructure FinFETsProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6576692