Cao, JingchenJingchenCaoWang, Peng FeiPeng FeiWangLi, XunXunLiGuo, ZixiangZixiangGuoZhang, En XiaEn XiaZhangReed, Robert A.Robert A.ReedAlles, Michael L.Michael L.AllesSchrimpf, Ronald D.Ronald D.SchrimpfFleetwood, Daniel M.Daniel M.FleetwoodArreghini, AntonioAntonioArreghiniRosmeulen, MaartenMaartenRosmeulenBastos, Joao P.Joao P.BastosVan den Bosch, GeertGeertVan den BoschLinten, DimitriDimitriLinten2022-06-282022-03-302022-05-202022-06-2820220018-9499WOS:000770010500031https://imec-publications.be/handle/20.500.12860/39554Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand DevicesJournal article10.1109/TNS.2021.3133407WOS:000770010500031RADIATION RESPONSEBORDER TRAPSOXIDEINTERFACERETENTIONTRANSPORTBUILDUPIMPACT