Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors

Aoulaiche, MarcMarcAoulaicheFederico, AntonioAntonioFedericoSimoen, EddyEddySimoenRitzenthaler, RomainRomainRitzenthalerSchram, TomTomSchramArimura, HiroakiHiroakiArimuraCho, Moon JuMoon JuChoKauerauf, ThomasThomasKaueraufCrupi, FeliceFeliceCrupiSpessot, AlessioAlessioSpessotCaillat, ChristianChristianCaillatFazan, PierrePierreFazanNa, Hoon JooHoon JooNaSon, YunikYunikSonNoh, Kyung BongKyung BongNohGroeseneken, GuidoGuidoGroesenekenHoriguchi, NaotoNaotoHoriguchiThean, AaronAaronThean2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/21978Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistorsProceedings paper