Liu, W.H.W.H.LiuPey, K.L.K.L.PeyWu, X.X.WuRaghavan, N.N.RaghavanPadovani, A.A.PadovaniLarcher, L.L.LarcherVandelli, L.L.VandelliBosman, M.M.BosmanKauerauf, ThomasThomasKauerauf2021-10-192021-10-1920110003-6951https://imec-publications.be/handle/20.500.12860/19320Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas annealJournal article