Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

Vais, AbhitoshAbhitoshVaisLin, DennisDennisLinDou, ChunmengChunmengDouMartens, KoenKoenMartensIvanov, TsvetanTsvetanIvanovXie, QiQiXieTang, FuFuTangGivens, MichaelMichaelGivensMaes, JanJanMaesCollaert, NadineNadineCollaertRaskin, Jean-PierreJean-PierreRaskinDe Meyer, KristinKristinDe MeyerThean, AaronAaronThean2021-10-222021-10-2220150003-6951https://imec-publications.be/handle/20.500.12860/26027Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border trapsJournal article