Self-aligned double patterning of 1x nm FinFETs; a new device integration through the challenging geometry

Kim, Min-SooMin-SooKimVandeweyer, TomTomVandeweyerAltamirano Sanchez, EfrainEfrainAltamirano SanchezDekkers, HaroldHaroldDekkersVan Besien, ElsElsVan BesienTsvetanova, DianaDianaTsvetanovaRichard, OlivierOlivierRichardChew, Soon AikSoon AikChewBoccardi, GuillaumeGuillaumeBoccardiHoriguchi, NaotoNaotoHoriguchi2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22601Self-aligned double patterning of 1x nm FinFETs; a new device integration through the challenging geometryProceedings paper