Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiOx-Based Passivating Contacts for Si Solar Cells

Sharma, RajivRajivSharmaAlleva, AlessandroAlessandroAllevaHajjiah, AliAliHajjiahSivaramakrishnan Radhakrishnan, HariharsudanHariharsudanSivaramakrishnan RadhakrishnanPoortmans, JefJefPoortmans2023-03-232022-08-312022-09-052023-03-2320222574-0962WOS:000842981400001https://imec-publications.be/handle/20.500.12860/40325Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiOx-Based Passivating Contacts for Si Solar CellsJournal article10.1021/acsaem.2c01631WOS:000842981400001BlisteringPassivating contactshydrogenated amorphous siliconpoly-Si/SiOx contactsilicon solar cells