Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm 3 node on a 6T-SRAM cell

Altamirano Sanchez, EfrainEfrainAltamirano SanchezParaschiv, VasileVasileParaschivDemand, MarcMarcDemandBoullart, WernerWernerBoullart2021-10-192021-10-1920110167-9317https://imec-publications.be/handle/20.500.12860/18470Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm 3 node on a 6T-SRAM cellJournal article