Firat, MericMericFiratSivaramakrishnan Radhakrishnan, HariharsudanHariharsudanSivaramakrishnan RadhakrishnanRecaman Payo, MariaMariaRecaman PayoDuerinckx, FilipFilipDuerinckxSharma, RajivRajivSharmaPoortmans, JefJefPoortmans2022-01-132021-11-022022-01-1320200160-8371WOS:000653077100040https://imec-publications.be/handle/20.500.12860/37881In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating ContactsProceedings paper978-1-7281-6115-0WOS:000653077100040