Area-selective Ru ALD by amorphous carbon modification using H plasma: from atomistic modeling to full wafer process integration

Zyulkov, IvanIvanZyulkovVoronina, EkaterinaEkaterinaVoroninaKrishtab, MikhailMikhailKrishtabVoloshin, DmitryDmitryVoloshinChan, BTBTChanMankelevich, YuriYuriMankelevichRakhimova, TatyanaTatyanaRakhimovaArmini, SilviaSilviaArminiDe Gendt, StefanStefanDe Gendt2022-01-062021-11-022022-01-0620202633-5409WOS:000625318000043https://imec-publications.be/handle/20.500.12860/38099Area-selective Ru ALD by amorphous carbon modification using H plasma: from atomistic modeling to full wafer process integrationJournal article10.1039/d0ma00462fWOS:000625318000043LAYER DEPOSITIONFILMSRUTHENIUMRUO4-PRECURSOR