Franco, JacopoJacopoFrancoArimura, HiroakiHiroakiArimuraBastos, JoaoJoaoBastosAfanasiev, ValeriValeriAfanasievde Marneffe, Jean-FrancoisJean-Francoisde MarneffeKim, Min-SooMin-SooKimKaczer, BenBenKaczerHoriguchi, NaotoNaotoHoriguchi2026-07-222026-07-222025979-8-3315-6786-62380-9248https://imec-publications.be/handle/20.500.12860/59904Low thermal budget RMG integration is required for future CMOS architectures. We demonstrate a novel low-temperature (450°C) plasma-based SiO2 formation process by oxygen and hydrogen radicals yielding a low-defectivity, fixed charge-free interfacial layer, and outmatching conventional SiO2 formation processes, including a 900°C dry oxidation. IL thickness control is demonstrated in the range of relevance for Core Logic and I/O gate stacks, which would not be possible with conventional self-limited chemical oxidation only. The novel IL enables ultimate NBTI reliability due to suppressed hole trapping and minimized interface state generation, without requiring any post-growth treatment. A comparative analysis vs. conventional chemOx IL with various treatments sheds light on the role of SiO2 positive fixed charge (trapped protons) on hole trapping and interface state de-passivation during NBTI stress.engProceedings paper10.1109/iedm50572.2025.11353598WOS:001701480300082