Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study

Lu, AugustinAugustinLuPourtois, GeoffreyGeoffreyPourtoisAgarwal, SaurabhSaurabhAgarwalAfzalian, AryanAryanAfzalianRadu, IulianaIulianaRaduHoussa, MichelMichelHoussa2021-10-232021-10-2320160003-6951https://imec-publications.be/handle/20.500.12860/26932Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles studyJournal articlehttp://scitation.aip.org/content/aip/journal/apl/108/4/10.1063/1.4940685