Hayama, K.K.HayamaTakakura, K.K.TakakuraOhtani, T.T.OhtaniKudou, T.T.KudouOhyama, H.H.OhyamaMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-172021-10-1720081369-8001https://imec-publications.be/handle/20.500.12860/13845Radiation damage in proton-irradiated strained Si n-MOSFETsJournal article