On the recoverable and permanent components of hot carrier and NBTI in Si pMOSFETs and their implications in Si0.45Ge0.55 pMOSFETs

Franco, JacopoJacopoFrancoKaczer, BenBenKaczerEneman, GeertGeertEnemanRoussel, PhilippePhilippeRousselCho, Moon JuMoon JuChoMitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersHoffmann, Thomas Y.Thomas Y.HoffmannGroeseneken, GuidoGuidoGroeseneken2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/18925On the recoverable and permanent components of hot carrier and NBTI in Si pMOSFETs and their implications in Si0.45Ge0.55 pMOSFETsProceedings paper