Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications

Veloso, AnabelaAnabelaVelosoCubaynes, FlorenceFlorenceCubaynesRothschild, AudeAudeRothschildMertens, SofieSofieMertensDegraeve, RobinRobinDegraeveO'Connor, RobertRobertO'ConnorOlsen, ChrisChrisOlsenDate, LucienLucienDateSchaekers, MarcMarcSchaekersDachs, CharlesCharlesDachsJurczak, GosiaGosiaJurczak2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8354Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applicationsProceedings paper