Wang, DongboDongboWangSoltanian, EmadEmadSoltanianQin, SenbiaoSenbiaoQinVaissiere, NicolasNicolasVaissiereNeel, DelphineDelphineNeelRamirez, JoanJoanRamirezDecobert, JeanJeanDecobertKuyken, BartBartKuykenZhang, JingJingZhangRoelkens, GuntherGuntherRoelkens2026-11-022026-11-0220261094-4087https://imec-publications.be/handle/20.500.12860/60700We demonstrate a widely tunable E-band InP-on-Si laser heterogeneously integrated using micro-transfer printing (µTP). The InP-based quantum-well gain material is designed with a photoluminescence peak centered around 1400 nm. Pre-fabricated InP semiconductor optical amplifiers (SOAs) are micro-transfer printed onto the IMEC 200 mm silicon-on-insulator (SOI) photonics platform. Using a silicon Vernier filter, continuous wavelength tuning from 1398 to 1439 nm is achieved, corresponding to a 41 nm tuning range spanning the upper E-band. The laser exhibits a side-mode suppression ratio exceeding 45 dB over the entire tuning range and delivers up to 3 mW output power in the silicon waveguide. A relative intensity noise (RIN) level down to −145 dBc/Hz is measured, indicating low-noise operation relevant for optical communication applications.engJournal article10.1364/oe.607214WOS:001857160700031III-V