Selectivity tuning by Peroxide concentration for the selective etching of SiGe20 to Si and SiGe40 to SiGe20

Lopez Villanueva1, Francisco JavierFrancisco JavierLopez Villanueva1Altamirano Sanchez, EfrainEfrainAltamirano Sanchez2025-02-102023-09-172025-02-102023-04-191662-9779, Vol. 346, pp 29-33https://imec-publications.be/handle/20.500.12860/42556Selectivity tuning by Peroxide concentration for the selective etching of SiGe20 to Si and SiGe40 to SiGe20Proceedings paper10.4028/p-Vl0z4a