Vandervorst, WilfriedWilfriedVandervorstJanssens, TomTomJanssensBrijs, BertBertBrijsDelhougne, RomainRomainDelhougneLoo, RogerRogerLooCaymax, MattyMattyCaymaxPawlak, BartekBartekPawlakPosselt, MatthiasMatthiasPosselt2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11465Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowthJournal article