Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge Fin structures

Loo, RogerRogerLooArimura, HiroakiHiroakiArimuraCott, DaireDaireCottWitters, LiesbethLiesbethWittersPourtois, GeoffreyGeoffreyPourtoisSchulze, AndreasAndreasSchulzeDouhard, BastienBastienDouhardVanherle, WendyWendyVanherleEneman, GeertGeertEnemanRichard, OlivierOlivierRichardFavia, PaolaPaolaFaviaMitard, JeromeJeromeMitardMocuta, DanDanMocutaLanger, RobertRobertLangerCollaert, NadineNadineCollaert2021-10-242021-10-242017-09https://imec-publications.be/handle/20.500.12860/28851Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge Fin structuresProceedings paperhttp://ecst.ecsdl.org/content/80/4/241.abstract