Drift mobile and Hall scattering factors of holes in ultrathin Si1-xGex layers (0.3<x<0.4) grown on Si

Lander, RobRobLanderPonomarev, YouriYouriPonomarevvan Berkum, J. G. M.J. G. M.van Berkumde Boer, W. B.W. B.de BoerLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4515Drift mobile and Hall scattering factors of holes in ultrathin Si1-xGex layers (0.3<x<0.4) grown on SiJournal article