Radiation hardness of Al(x)Ga(1-x)N photodetectors exposed to Extreme UltraViolet (EUV) light beam

Malinowski, PawelPawelMalinowskiJohn, JoachimJoachimJohnLorenz, AnneAnneLorenzCheng, KaiKaiChengDerluyn, JoffJoffDerluynGermain, MarianneMarianneGermainDe Moor, PietPietDe MoorMinoglou, KikiKikiMinoglouBarkusky, FrankFrankBarkuskyBayer, ArminArminBayerMann, KlausKlausMannDuboz, Jean-YvesJean-YvesDubozSemond, FabriceFabriceSemondHochedez, Jean-FrancoisJean-FrancoisHochedezGiordanengo, BorisBorisGiordanengoBorghs, GustaafGustaafBorghsMertens, RobertRobertMertens2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15794Radiation hardness of Al(x)Ga(1-x)N photodetectors exposed to Extreme UltraViolet (EUV) light beamProceedings paper